I-Junda Silicon Carbide Grit yeyona mithombo inzima ihamba nzima. Le mveliso ikumgangatho ophezulu yenziwa kwi-blocky, i-anglar yenkozo. Lo mthombo wamajelo uya kwaphula ngokuqhubekayo okhokelela kwimiphetho ebukhali. Ubunzima be-silicon carbide grit ivumela amaxesha amafutshane ukuqhuma kwi-medias ethambileyo.
Ngenxa yeepropathi zayo ezizinzileyo zeekhemikhali, ukuqhubela phambili kwe-thermal ephezulu, ukwandiswa kwe-thermal of thermal of thermal, kunye nokunganyangeki okuhle, i-silicon carbide isebenzisa ezinye izinto ezisetyenziswayo. Umzekelo, i-silicon carbide powder isetyenziswa kumthengisi we-imple okanye isilinda senjini yamanzi yinkqubo ekhethekileyo. Udonga lwangaphakathi lunokuphucula ukunyangwa kwalo kwaye luphelise ubomi bayo bobomi nge-1 ukuya kwezi-2; Izinto ezikhutshiweyo eziphezulu ezenziwe ngayo zinokutshitshiswa kwenkukhu, ubungakanani obukhulu, ubunzima bokukhanya, amandla aphezulu kunye nefuthe elilungileyo longa amandla. I-carbide ye-carbicon ephantsi (equlathe malunga ne-85% ye-SIC) yeyona deoxizer ebalaseleyo. Inokukhawulezisa isantya sendyikitya, kwaye siququzelele ulawulo lokwakhiwa kweekhemikhali kunye nokuphucula umgangatho wentsimbi. Ukongeza, i-Silicon Carbide isetyenziselwa ukwenza ngokubanzi ukwenza iintonga ze-selicon carbide zezinto zokufudumeza kombane.
I-Silicon Carbide inelukhuni ephakamileyo kakhulu, kunye nobunzima be-9.5, yesibini kuphela kwiDayimane yeHlabathi yeHlabathi (10). Inengxaki yokugqibelela emngciphekweni, yi-semiconductor, kwaye inokumelana ne-oxidation kumaqondo obushushu aphezulu.
Ngenxa yeepropathi zayo ezizinzileyo zeekhemikhali, ukuqhubela phambili kwe-thermal ephezulu, ukwandiswa kwe-thermal of thermal of thermal, kunye nokunganyangeki okuhle, i-silicon carbide isebenzisa ezinye izinto ezisetyenziswayo. Umzekelo, i-silicon carbide powder isetyenziswa kumthengisi we-imple okanye isilinda senjini yamanzi yinkqubo ekhethekileyo. Udonga lwangaphakathi lunokwandisa ukuxhathisa kwalo kwaye kwandisa inkonzo yayo nge-1 ukuya kwezi-2; Izinto eziphicociweyo ezenziwe ngazo zinokutshatisa ukothuka, ubungakanani obukhulu, ubunzima bokukhanya, amandla aphezulu kunye nefuthe elihle-lisindisa amandla. I-carbide ye-carbicon ephantsi (equlathe malunga ne-85% ye-SIC) yeyona deoxizer ebalaseleyo. Inokukhawulezisa isantya sendyikitya, kwaye siququzelele ulawulo lokwakhiwa kweekhemikhali kunye nokuphucula umgangatho wentsimbi. Ukongeza, i-Silicon Carbide isetyenziselwa ukwenza ngokubanzi ukwenza iintonga ze-selicon carbide zezinto zokufudumeza kombane.
I-Silicon Carbide Grit Inkcazo | |
Ubungakanani be-mesh | Ubungakanani obuqhelekileyo(incinci i-mesh inombolo, i-coarser i-grit) |
I-8mesh | I-45% Mesh (2.3 mm) okanye enkulu |
I-10Mesh | I-45% ye-10 mesh (i-2.0 mm) okanye enkulu |
12mesh | I-45% Mesh (i-1.7 mm) okanye enkulu |
I-14mesh | I-45% Mesh (1.4 mm) okanye enkulu |
16MOSH | I-45% Mesh (i-1.2 mm) okanye enkulu |
20mesh | I-70% Mesh (i-0.85 mm) okanye enkulu |
I-22mesh | I-45% Mesh (i-0.85 mm) okanye enkulu |
I-24Esh | I-45% Mesh (i-0.7 mm) okanye enkulu |
30mesh | I-45% Mesh (i-0.56 mm) okanye enkulu |
36 yeshi | I-45% Mesh (i-0.48 mm) okanye enkulu |
40mesh | I-45% Mesh (i-0.42 mm) okanye enkulu |
I-46mesh | I-40% 45 Mesh (0.35 mm) okanye enkulu |
54Mesh | I-40% 50 Mesh (0.33 mm) okanye enkulu |
60mesh | I-40% 60 Mesh (0.25 mm) okanye enkulu |
I-70mesh | I-40% 70 mesh (0.21 mm) okanye enkulu |
I-80mesh | I-40% 80 Mesh (0.17 mm) okanye enkulu |
I-90mesh | I-40% Mesh (0.15 mm) okanye enkulu |
I-100mesh | I-40% 120 mesh (0.12 mm) okanye enkulu |
I-120Mesh | I-40% 140 Mesh (0.10 mm) okanye enkulu |
I-150Mesh | I-40% ye-mesh (i-0.08 mm) okanye enkulu |
I-180Mesh | I-40% ye-230 mesh (i-0.06 mm) okanye enkulu |
220Mesh | I-40% 270 Mesh (i-0.046 mm) okanye enkulu |
I-240Mesh | I-38% 325 Mesh (i-0.037 mm) okanye enkulu |
280Mesh | I-Median: 33.0-36.0 microron |
320Mesh | I-Median: 26.3-29.2.2.2.2.2 Microron |
360Mesh | I-Median: 20.1-23.1 Microron |
400mesh | I-Median: 15.5-17.5 Microron |
500mesh | I-Median: 11.33.3 microron |
I-600mesh | I-Median: 8.0-10.0 microron |
I-800mesh | I-Median: 5.3-7.3.3 Microron |
I-1000mesh | I-Median: 3.7-5.3.3 micron |
I-1200mesh | I-Median: 2.6-3.6 microron |
Pigama le-rodcct | Iipropathi eziqhelekileyo eziqhelekileyo | Uhlalutyo lwe-proXX | |||||||
I-Silicon carbide | Umbala | Ubume beenkozo | Umxholo wemagneti | Ubunzima | Ubunzima obuthile | I-sic | I-98.58% | Fe | I-0.11% |
Mnyama | I-angular | I-0.2 - i-0.5% | 9.5 Mohs | 3.2 | C | I-0.05% | Al | I-0.02% | |
Si | I-0.80% | I-cao | I-0.03% | ||||||
Sio2 | I-0.30% | Mgo | I-0.05% |