IJunda Silicon Carbide Grit yeyona media inzima yokuqhushumba ekhoyo. Le mveliso ikumgangatho ophezulu yenziwe ibe yibloko, imilo yeenkozo ezizii-angular. Le mithombo yeendaba iya kudilika ngokuqhubekayo ibangele imiphetho ebukhali, yokusika. Ubunzima beSilicon Carbide Grit buvumela amaxesha amafutshane okuqhuma ngokumalunga nemidiya ethambileyo.
Ngenxa yeepropathi zayo zeekhemikhali ezizinzile, i-thermal conductivity ephezulu, i-coefficient yokwandisa i-thermal ephantsi, kunye nokunganyangeki kakuhle kokunxiba, i-silicon carbide inokusebenzisa ezinye izinto ezininzi ngaphandle kokusetyenziswa njenge-abrasives. Ngokomzekelo, i-silicon carbide powder isetyenziswe kwi-impeller okanye i-cylinder ye-turbine yamanzi ngenkqubo ekhethekileyo. Udonga lwangaphakathi lunokuphucula ukuxhatshazwa kwayo kunye nokwandisa ubomi bayo benkonzo nge-1 ukuya kwii-2 amaxesha; Isixhobo sokumelana nomgangatho ophezulu owenziwe ngayo unokumelana nokothuka kobushushu, ubungakanani obuncinci, ubunzima obukhanyayo, amandla aphezulu kunye nesiphumo esihle sokugcina amandla. I-silicon carbide ye-low-grade (equlethe malunga ne-85% ye-SiC) yi-deoxidizer egqwesileyo. Inokukhawulezisa isantya se-steelmaking, kwaye iququzelele ulawulo lokubunjwa kweekhemikhali kunye nokuphucula umgangatho wentsimbi. Ukongeza, i-silicon carbide ikwasetyenziswa ngokubanzi ukwenza iintonga ze-silicon carbide kwizinto zokufudumeza zombane.
I-silicon carbide inobunzima obuphezulu kakhulu, kunye nobunzima be-Mohs be-9.5, okwesibini kuphela kwidayimane enzima kakhulu emhlabeni (10). Inomgangatho obalaseleyo we-thermal conductivity, i-semiconductor, kwaye inokumelana ne-oxidation kumaqondo aphezulu.
Ngenxa yeepropathi zayo zeekhemikhali ezizinzile, i-thermal conductivity ephezulu, i-coefficient yokwandisa i-thermal ephantsi, kunye nokunganyangeki kakuhle kokunxiba, i-silicon carbide inokusebenzisa ezinye izinto ezininzi ngaphandle kokusetyenziswa njenge-abrasives. Ngokomzekelo, i-silicon carbide powder isetyenziswe kwi-impeller okanye i-cylinder ye-turbine yamanzi ngenkqubo ekhethekileyo. Udonga lwangaphakathi lunokunyusa ukuchasana kwayo kunye nokwandisa ubomi bayo benkonzo nge-1 ukuya kumaxesha ama-2; izinto ezichasayo ezenziwe ngayo zinokuxhathisa ukothuka kobushushu, ubungakanani obuncinci, ubunzima obukhanyayo, amandla aphezulu kunye nesiphumo esihle sokugcina amandla. I-silicon carbide ye-low-grade (equlethe malunga ne-85% ye-SiC) yi-deoxidizer egqwesileyo. Inokukhawulezisa isantya se-steelmaking, kwaye iququzelele ulawulo lokubunjwa kweekhemikhali kunye nokuphucula umgangatho wentsimbi. Ukongeza, i-silicon carbide ikwasetyenziswa ngokubanzi ukwenza iintonga ze-silicon carbide kwizinto zokufudumeza zombane.
IiNkcazo zeSilicon Carbide Grit | |
Ubungakanani beMesh | Ubungakanani beNcam ephakathi(incinci inamba yomnatha, irhabaxa irhabaxa) |
8umnatha | 45% 8 mesh (2.3 mm) okanye ngaphezulu |
10umnatha | 45% 10 i-mesh (2.0 mm) okanye ngaphezulu |
12umnatha | 45% 12 mesh (1.7 mm) okanye ngaphezulu |
14 Umnatha | 45% 14 mesh (1.4 mm) okanye ngaphezulu |
16umnatha | 45% 16 mesh (1.2 mm) okanye ngaphezulu |
20umnatha | 70% 20 mesh (0.85 mm) okanye ngaphezulu |
22umnatha | 45% 20 mesh (0.85 mm) okanye ngaphezulu |
24umnatha | 45% 25 mesh (0.7 mm) okanye ngaphezulu |
30umnatha | 45% 30 mesh (0.56 mm) okanye ngaphezulu |
36umnatha | 45% 35 mesh (0.48 mm) okanye ngaphezulu |
40umnatha | 45% 40 mesh (0.42 mm) okanye ngaphezulu |
46umnatha | 40% 45 mesh (0.35 mm) okanye ngaphezulu |
54umnatha | 40% 50 mesh (0.33 mm) okanye ngaphezulu |
60umnatha | 40% 60 mesh (0.25 mm) okanye ngaphezulu |
70umnatha | 40% 70 mesh (0.21 mm) okanye ngaphezulu |
80umnatha | 40% 80 mesh (0.17 mm) okanye ngaphezulu |
90umnatha | 40% 100 i-mesh (0.15 mm) okanye ngaphezulu |
100Mesh | 40% 120 i-mesh (0.12 mm) okanye enkulu |
120umnatha | 40% 140 mesh (0.10 mm) okanye ngaphezulu |
150Mesh | 40% 200 mesh (0.08 mm) okanye ngaphezulu |
180umnatha | 40% 230 mesh (0.06 mm) okanye ngaphezulu |
220Mesh | 40% 270 mesh (0.046 mm) okanye ngaphezulu |
240Mesh | 38% 325 mesh (0.037 mm) okanye ngaphezulu |
280Mesh | Umphakathi: 33.0-36.0 micron |
320Mesh | Umphakathi: 26.3-29.2 micron |
360Mesh | Umphakathi: 20.1-23.1 micron |
400Mesh | Umphakathi: 15.5-17.5 micron |
500Mesh | Umphakathi: 11.3-13.3 micron |
600Mesh | Umphakathi: 8.0-10.0 micron |
800Mesh | Umphakathi: 5.3-7.3 micron |
1000Mesh | Umphakathi: 3.7-5.3 micron |
1200Mesh | Umphakathi: 2.6-3.6 micron |
Pigama lomzila | IiPropati zoMzi oqhelekileyo | Uhlalutyo lwemichiza olusondeleyo | |||||||
I-silicon carbide | Umbala | Imilo yeenkozo | Umxholo wemagnethi | Ukuqina | Ubunzima obuthile | SiC | 98.58 % | Fe | 0.11 % |
Mnyama | I-Angular | 0.2 - 0.5 % | 9.5 Mohs | 3.2 | C | 0.05 % | Al | 0.02 % | |
Si | 0.80 % | CaO | 0.03 % | ||||||
SiO2 | 0.30 % | MgO | 0.05 % |