I-Junda Silicon Carbide Grit yeyona mithombo yokuqhumisa enzima kakhulu ekhoyo. Le mveliso ikumgangatho ophezulu yenziwe ngohlobo oluqinileyo nolunemilo engqukuva. Le mithombo iya kuqhekeka rhoqo nto leyo ekhokelela kwimiphetho ebukhali neyokusika. Ubunzima be-Silicon Carbide Grit buvumela amaxesha okuqhuma amafutshane xa kuthelekiswa nemithombo ethambileyo.
Ngenxa yeempawu zayo ezizinzileyo zeekhemikhali, ukuqhuba okuphezulu kobushushu, i-coefficient ephantsi yokwandisa ubushushu, kunye nokumelana nokuguguleka okuhle, i-silicon carbide inezinye iindlela ezininzi ngaphandle kokusetyenziswa njenge-abrasives. Umzekelo, umgubo we-silicon carbide ufakwa kwi-impeller okanye isilinda se-turbine yamanzi ngenkqubo ekhethekileyo. Udonga lwangaphakathi lunokuphucula ukumelana nokuguguleka kwaye lwandise ubomi balo benkonzo ngokuphindwe ka-1 ukuya kwezi-2; izinto ezichaseneyo eziphezulu ezenziwe ngazo zinokuxhathisa ukuthuthumela kobushushu, zincinci ngobukhulu, zinobunzima obuphantsi, zinamandla aphezulu kwaye zinomphumo omuhle wokonga amandla. I-silicon carbide ephantsi (equlethe malunga ne-85% ye-SiC) yi-deoxidizer egqwesileyo. Ingakhawulezisa isantya sokwenza intsimbi, kwaye iququzelele ulawulo lwekhemikhali kwaye iphucule umgangatho wentsimbi. Ukongeza, i-silicon carbide ikwasetyenziswa kakhulu ukwenza iintonga ze-silicon carbide zezinto zokufudumeza zombane.
I-silicon carbide inobunzima obuphezulu kakhulu, inobunzima be-Mohs obuyi-9.5, ilandela idayimani enzima kakhulu emhlabeni (10). Inomoya ohamba kakuhle kakhulu wokushisa, yi-semiconductor, kwaye inokumelana ne-oxidation kumaqondo obushushu aphezulu.
Ngenxa yeempawu zayo ezizinzileyo zeekhemikhali, ukuqhuba okuphezulu kobushushu, i-coefficient ephantsi yokwandisa ubushushu, kunye nokumelana nokuguguleka okuhle, i-silicon carbide inezinye iindlela ezininzi ngaphandle kokusetyenziswa njenge-abrasives. Umzekelo, umgubo we-silicon carbide ufakwa kwi-impeller okanye isilinda se-turbine yamanzi ngenkqubo ekhethekileyo. Udonga lwangaphakathi lunokunyusa ukumelana nokuguguleka kwaye lwandise ubomi balo benkonzo ngokuphindwe ka-1 ukuya kwezi-2; izinto ezichaseneyo ezenziwe ngayo zinokumelana nokuthuthumela kobushushu, zincinci, zinobunzima obuphantsi, zinamandla aphezulu kwaye zinomphumo omhle wokonga amandla. I-silicon carbide ekumgangatho ophantsi (equlethe malunga ne-85% ye-SiC) yi-deoxidizer egqwesileyo. Ingakhawulezisa isantya sokwenza intsimbi, kwaye iququzelele ulawulo lwekhemikhali kwaye iphucule umgangatho wentsimbi. Ukongeza, i-silicon carbide ikwasetyenziswa kakhulu ukwenza iintonga ze-silicon carbide zezinto zokufudumeza zombane.
| Iinkcukacha zeSilicon Carbide Grit | |
| Ubungakanani beMesh | Ubungakanani obuqhelekileyo beParticle(okukhona inani le-mesh lincinci, kokukhona i-grit ikhula kakhulu) |
| 8Mesh | 45% 8 mesh (2.3 mm) okanye ngaphezulu |
| 10Mesh | 45% 10 mesh (2.0 mm) okanye ngaphezulu |
| 12Mesh | 45% 12 mesh (1.7 mm) okanye ngaphezulu |
| 14Umnatha | 45% 14 mesh (1.4 mm) okanye ngaphezulu |
| 16Umnatha | 45% 16 mesh (1.2 mm) okanye ngaphezulu |
| 20Mesh | 70% 20 mesh (0.85 mm) okanye ngaphezulu |
| 22I-Mesh | 45% 20 mesh (0.85 mm) okanye ngaphezulu |
| 24I-Mesh | 45% 25 mesh (0.7 mm) okanye ngaphezulu |
| 30Umnatha | 45% 30 mesh (0.56 mm) okanye ngaphezulu |
| 36I-Mesh | 45% 35 mesh (0.48 mm) okanye ngaphezulu |
| 40Mesh | 45% 40 mesh (0.42 mm) okanye ngaphezulu |
| 46Umnatha | 40% 45 mesh (0.35 mm) okanye ngaphezulu |
| 54Umnatha | 40% 50 mesh (0.33 mm) okanye ngaphezulu |
| 60Mesh | 40% 60 mesh (0.25 mm) okanye ngaphezulu |
| 70Mesh | 40% 70 mesh (0.21 mm) okanye ngaphezulu |
| 80Mesh | 40% 80 mesh (0.17 mm) okanye ngaphezulu |
| 90Mesh | 40% 100 mesh (0.15 mm) okanye ngaphezulu |
| 100Mesh | 40% 120 mesh (0.12 mm) okanye ngaphezulu |
| 120Mesh | 40% 140 mesh (0.10 mm) okanye ngaphezulu |
| 150Mesh | 40% 200 mesh (0.08 mm) okanye ngaphezulu |
| 180Mesh | 40% 230 mesh (0.06 mm) okanye ngaphezulu |
| 220Mesh | 40% 270 mesh (0.046 mm) okanye ngaphezulu |
| 240Mesh | 38% 325 mesh (0.037 mm) okanye ngaphezulu |
| 280Mesh | I-Median: 33.0-36.0 micron |
| 320Mesh | I-Median: 26.3-29.2 micron |
| 360Mesh | I-Median: 20.1-23.1 micron |
| 400Mesh | Iphakathi: 15.5-17.5 micron |
| 500Mesh | I-Median: 11.3-13.3 micron |
| 600Mesh | Iphakathi: 8.0-10.0 micron |
| 800Mesh | Iphakathi: 5.3-7.3 micron |
| 1000Mesh | Iphakathi: 3.7-5.3 micron |
| 1200Mesh | Iphakathi: 2.6-3.6 micron |
| Pigama lemveliso | Iimpawu Eziqhelekileyo Zomzimba | Uhlalutyo lweeKhemikhali olukufutshane | |||||||
| I-silicon carbide | Umbala | Imilo yengqolowa | Umxholo weMagnetic | Ukuqina | Ubunzima obuthile | I-SiC | 98.58 % | Fe | 0.11 % |
| Mnyama | I-Angular | 0.2 – 0.5 % | IiMohs eziyi-9.5 | 3.2 | C | 0.05 % | Al | 0.02 % | |
| Si | 0.80 % | I-CaO | 0.03 % | ||||||
| I-SiO2 | 0.30 % | I-MgO | 0.05 % | ||||||
